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Datasheet File OCR Text: |
SHENZHEN ICHN ELECTRONICS TECH. CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT 23 1. BASE 9012LT1 FEATURES TRANSISTOR PNP (c) 2. EMITTER 3. COLLECTOR Power dissipation PCM : 0.3 W Tamb=25ae(c) Collector current ICM : -0.5 A Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range T J T stg: -55aeto +150ae ELECTRICAL CHARACTERISTICS Tamb=25ae unless otherwise specified(c) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) VCE=-1V, IC=-500mA IC=-500 mA, IB= -50m A IC=-500 mA, IB= -50m A VCE=-6V, I = -20mA C 150 40 Test conditions MIN -40 -25 -5 TYP Unit : mm MAX UNIT V V V Ic= -100|I A IE=0 Ic= -1mAIB=0 IE=-100|I AIC=0 VCB=-40 V , IE=0 VCE=-20V , IB=0 VEB= -5V , IC=0 -0.1 -0.1 -0.1 120 350 |I A |I A |I A VCE=-1V, IC= -50m A -0.6 -1.2 V V MHz fT f=30MHz CLASSIFICATION OF h FE(1) Rank Range L 120- 200 H 200- 350 DEVICE MARKING: 9012LT1=2T1 HTTP: WWW. SZXC. COM. CN |
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